ds23017 rev. 7 - 2 1 of 2 MBR3030PT - mbr3060pt www.diodes.com diodes incorporated MBR3030PT - mbr3060pt 30a schottky barrier rectifier features a b e g j l m n p q k s m h r d c maximum ratings and electrical characteristics @ t a = 25 c unless otherwise specified guard ring die construction for transient protection low power loss, high efficiency high surge capability high current capability and low forward voltage drop for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications plastic material: ul flammability classification rating 94v-0 mechanical data case: molded plastic terminals: plated leads solderable per mil-std-202, method 208 moisture sensitivity: level 1 per j-std-020a polarity: as marked on body marking: type number weight: 5.6 grams (approx.) single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol mbr 3030pt mbr 3035pt mbr 3040pt mbr 3045pt mbr 3050pt mbr 3060pt unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 30 35 40 45 50 60 v rms reverse voltage v r(rms) 21 24.5 28 31.5 35 42 v average rectified output current @ t c = 125 c total device (see fig. 1) i o 30 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 200 a forward voltage drop @ i f = 20a, t c = 25 c per element (note 3) @ i f = 20a, t c = 125 c @ i f = 30a, t c = 25 c @ i f = 30a, t c = 125 c v fm 0.60 0.76 0.72 0.75 0.65 0.80 0.75 v peak reverse current @ t c = 25 c at rated dc blocking voltage, per element @ t c = 125 c i rm 1.0 60 5.0 100 ma typical total capacitance (note 2) c t 500 pf typical thermal resistance junction to case (note 1) r jc 1.4 c/w voltage rate of change (rated v r ) dv/dt 10,000 v/s operating temperature range t j -65 to +150 c storage temperature range t stg -65 to +175 c notes: 1. thermal resistance junction to case mounted on heatsink. 2. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 3. pulse width 300 s, duty cycle 2%. to-3p dim min max a 1.88 2.08 b 4.68 5.36 c 20.63 22.38 d 18.5 21.5 e 2.1 2.4 g 0.51 0.76 h 15.38 16.25 j 1.90 2.70 k 2.9 3.65 l 3.78 4.50 m 5.2 5.7 n 0.89 1.53 p 1.82 2.46 q 2.92 3.23 r 11.70 12.84 s 6.10 all dimensions in mm
ds23017 rev. 7 - 2 2 of 2 MBR3030PT - mbr3060pt www.diodes.com 0.1 1.0 10 i , instantaneous forward current (a) f v , instantaneous f0rward voltage (v) f fi g . 2 t y pical forward characteristics, per element 100 0 0.2 0.4 mbr 3030pt - mbr 3045pt mbr 3050pt - mbr 3060pt 0.6 0.8 t = 25c j 2% duty cycle 0 50 100 150 200 250 300 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fi g . 3 max non-repetitive sur g e current t = 25c j 8.3ms single half-wave jedec method 100 1000 4 000 0.1 1.0 10 100 c , capacitance (pf) t v , reverse voltage (v) r fi g .4 t y pical total capacitance t = 25c j f = 1mhz 0.01 0.1 1.0 10 0 20 40 60 80 100 120 140 i , instantaneous reverse current (ma) r percent of rated peak reverse voltage (%) fig. 5 typical reverse characteristics, per element t = 125c j t = 75c j t = 25c j 100 050100150 i , average forward current (a) o t , case temperature (c) c fi g . 1 forward current deratin g curve, total device 0 6 12 18 24 30
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